thinfilmtransistor相关论文
Printed electronics has attracted more and more attention in recent years due to their great potential in large-area and......
Influence of Grain Size in the First Pentacene Layer on Bias-stress Effect in Pentacene-based Thin F
Organic thin film transistors (OTFTs) have attracted considerable attention because of their potential to be utilized as......
Bending characteristics of flexible amorphous InGaZnO thin film transistors with organic/inorganic m
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si......
Recently,transparent amorphous oxide semiconductors such as Ga-In-Zn-O (a-GIZO),In-Sn-O (ITO),Zn-O (ZnO),In-Ga-O (IGO) a......
Effects of in-situ remote plasma treatment on amorphous indium gallium zinc oxide thin film transist
Amorphous InGaZnO (a-IGZO) material is a post transition metal oxide which has recently garnered much attention as a act......
Amorphous Metal Oxide/Carbon Nanotubes Hybrid Thin-Tilm Transistors: A New Avenue to High Speed Macr
First, we report unique performance transistors based on a sol-gel processed indium zinc oxide/ single-walled carbon nan......
We have systematically explored the strategy of design high performance organic semiconductors based on N-heteroacenes f......
Amorphous oxide semiconductors(AOSs)are considered as the most promising channel materials for thin-film transistors(TFT......
Bending the cost curve: leveraging aging TFT manufacturing facilities to achieve a $1000 digital X-r
Cost, quality and accessibility are major barriers to disease detection in low-income countries. For example, diagnosti......
Semiconductor-based products greatly changed peoples life in the last half century and will continuously influence our d......
Short channel carbon nanotube thin film transistors with high on/off ratio fabricated by two-step fr
薄电影晶体管(CNT-TFTs ) 制造被表明的为碳 nanotube 的一个二拍子的圆舞 fringing 地 dielectrophoretic 集会方法。浓密地排列......
详细分析了当前ＴＦＴ－ＬＣＤ驱动电路所使用的场反转、行反转和列／点反转驱动方法，说明了每种方法的优、缺点和应用的场合。......
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度......
分析了α－Ｓｉ∶Ｈ薄膜的质量和厚度对α－Ｓｉ∶ＨＴＦＴ关键性指标的影响，深入、详细地讨论了其ＰＥＣＶＤ淀积工艺，并在实验的基础上确定了最佳淀积工艺参数，从而获......
